All Transistors. 3DD3150A8 Datasheet

 

3DD3150A8 Datasheet and Replacement


   Type Designator: 3DD3150A8
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 1100 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220AB
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3DD3150A8 Datasheet (PDF)

 ..1. Size:153K  crhj
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3DD3150A8

NPN R 3DD3150 A8 3DD3150 A8 NPN VCEO 800 V IC 3 A Ptot W TC=25 40

 6.1. Size:346K  lzg
 3dd3150a.pdf pdf_icon

3DD3150A8

2SC3150A(3DD3150A) NPN /SILICON NPN TRANSISTOR : Purpose: Switching regulator applications. : Features: High V , high speed switching, wide ASO. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1000 V CBO V 750 V

 7.1. Size:153K  crhj
 3dd3150 a8.pdf pdf_icon

3DD3150A8

NPN R 3DD3150 A8 3DD3150 A8 NPN VCEO 800 V IC 3 A Ptot W TC=25 40

 9.1. Size:151K  crhj
 3dd3145 a6.pdf pdf_icon

3DD3150A8

NPN R 3DD3145 A6 3DD3145 A6 NPN VCEO 600 V IC 1.3 A Ptot TC=25 50 W

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Keywords - 3DD3150A8 transistor datasheet

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