3DF1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DF1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar 3DF1
3DF1 Datasheet (PDF)
3df1.pdf
3DD1(3DF1) NPN A B C D E F G PCM Tc=25 10 W ICM 1.5 A Tjm 175 Tstg -55~175 V(BR)CBO ICB=5mA 80 150 250 350 450 600 800 V V(BR)CEO ICE=5mA 50 100 200 250 300 400 500 V V(BR)EBO IEB=1mA 6.0 V ICEO VCE=30V 0.2 mA
3df1c.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DF1CDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE M
3df1e.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DF1EDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE M
3df1f.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DF1FDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE M
3df1a.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DF1ADESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE M
3df1b.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DF1BDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE M
3df1d.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DF1DDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE M
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 846CT | FHD11032
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050