Биполярный транзистор 3DF1 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 3DF1
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO3
3DF1 Datasheet (PDF)
3df1.pdf
3DD1(3DF1) NPN A B C D E F G PCM Tc=25 10 W ICM 1.5 A Tjm 175 Tstg -55~175 V(BR)CBO ICB=5mA 80 150 250 350 450 600 800 V V(BR)CEO ICE=5mA 50 100 200 250 300 400 500 V V(BR)EBO IEB=1mA 6.0 V ICEO VCE=30V 0.2 mA
3df1c.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DF1CDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE M
3df1e.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DF1EDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE M
3df1f.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DF1FDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE M
3df1a.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DF1ADESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE M
3df1b.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DF1BDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE M
3df1d.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DF1DDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE M
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050