3DF1 Datasheet and Replacement
Type Designator: 3DF1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
3DF1 Substitution
3DF1 Datasheet (PDF)
3df1.pdf

3DD1(3DF1) NPN A B C D E F G PCM Tc=25 10 W ICM 1.5 A Tjm 175 Tstg -55~175 V(BR)CBO ICB=5mA 80 150 250 350 450 600 800 V V(BR)CEO ICE=5mA 50 100 200 250 300 400 500 V V(BR)EBO IEB=1mA 6.0 V ICEO VCE=30V 0.2 mA
3df1c.pdf

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DF1CDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE M
3df1e.pdf

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DF1EDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE M
3df1f.pdf

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DF1FDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE M
Datasheet: 3DD820 , 3DD831 , 3DD8E , 3DD9 , 3DD99 , 3DD9D , 3DD9E , 3DF05 , TIP31 , 3DF5 , 3DG100 , 3DG1009A , 3DG101 , 3DG102 , 3DG103 , 3DG1047 , 3DG110 .
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