3DG1162 Todos los transistores

 ..1. Size:236K  foshan
 3dg1162.pdf

2SC1162(3DG1162) NPN /SILICON NPN TRANSISTOR /Purpose Low frequency power amplifier. 2SA715(3CG715) /Features Complementary pair with 2SA715(3CG715). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 35 V CBO V 35 V CEO V 5.0 V EBO I 2.5 A C I 3.0 A

 9.1. Size:118K  china
 3dg117b.pdf

3DG117B NPN PCM TA=25 300 mW ICM 30 mA Tjm 175 Tstg -55 175 V(BR)CBO ICB=0.1mA 160 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 4.0 V ICEO VCE=10V 0.1 A IC=10mA VCEsat 0.7 V IB=1mA VCE=10V hFE 30 IC=5mA VCE=10V

 9.2. Size:127K  china
 3dg112.pdf

3DG112 NPN A B C D PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 40 20 40 V V(BR)CEO ICE=0.1mA 15 30 15 30 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A

 9.3. Size:128K  china
 3dg111.pdf

3DG111 NPN A B C D PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 40 60 80 V V(BR)CEO ICE=0.1mA 15 30 45 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A

 9.4. Size:103K  china
 3dg114b.pdf

3DG114B NPN PCM TA=25 1000 mW ICM 1000 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1.5 VC

 9.5. Size:127K  china
 3dg110.pdf