All Transistors. 3DG1162 Datasheet

 

3DG1162 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DG1162
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO126F

 3DG1162 Transistor Equivalent Substitute - Cross-Reference Search

   

3DG1162 Datasheet (PDF)

 ..1. Size:236K  foshan
3dg1162.pdf

3DG1162 3DG1162

2SC1162(3DG1162) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency power amplifier. : 2SA715(3CG715)/Features: Complementary pair with 2SA715(3CG715). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 35 V CBO V 35 V CEO V 5.0 V EBO I 2.5 A C I 3.0 A

 9.1. Size:118K  china
3dg117b.pdf

3DG1162

3DG117B NPN PCM TA=25 300 mW ICM 30 mA Tjm 175 Tstg -55~175 V(BR)CBO ICB=0.1mA 160 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 4.0 V ICEO VCE=10V 0.1 A IC=10mA VCEsat 0.7 V IB=1mA VCE=10V hFE 30 IC=5mA VCE=10V

 9.2. Size:127K  china
3dg112.pdf

3DG1162

3DG112 NPN A B C D PCM 300 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 40 20 40 V V(BR)CEO ICE=0.1mA 15 30 15 30 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A

 9.3. Size:128K  china
3dg111.pdf

3DG1162

3DG111 NPN A B C D PCM 300 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 40 60 80 V V(BR)CEO ICE=0.1mA 15 30 45 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A

 9.4. Size:103K  china
3dg114b.pdf

3DG1162

3DG114B NPN PCM TA=25 1000 mW ICM 1000 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1.5 VC

 9.5. Size:127K  china
3dg110.pdf

3DG1162

3DG110 NPN A B C D PCM 300 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.03 A ICEO VCE=10V 0.5 A IEBO VEB=1.5V 0.05 A

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N3806

 

 
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