3DG1162 Specs and Replacement
Type Designator: 3DG1162
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO126F
3DG1162 Substitution
- BJT ⓘ Cross-Reference Search
3DG1162 datasheet
2SC1162(3DG1162) NPN /SILICON NPN TRANSISTOR /Purpose Low frequency power amplifier. 2SA715(3CG715) /Features Complementary pair with 2SA715(3CG715). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 35 V CBO V 35 V CEO V 5.0 V EBO I 2.5 A C I 3.0 A ... See More ⇒
3DG117B NPN PCM TA=25 300 mW ICM 30 mA Tjm 175 Tstg -55 175 V(BR)CBO ICB=0.1mA 160 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 4.0 V ICEO VCE=10V 0.1 A IC=10mA VCEsat 0.7 V IB=1mA VCE=10V hFE 30 IC=5mA VCE=10V ... See More ⇒
3DG112 NPN A B C D PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 40 20 40 V V(BR)CEO ICE=0.1mA 15 30 15 30 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A ... See More ⇒
3DG111 NPN A B C D PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 40 60 80 V V(BR)CEO ICE=0.1mA 15 30 45 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A ... See More ⇒
Detailed specifications: 3DG101, 3DG102, 3DG103, 3DG1047, 3DG110, 3DG111, 3DG112, 3DG114B, 2SC945, 3DG117B, 3DG12, 3DG120, 3DG121, 3DG1213, 3DG1213A, 3DG122, 3DG123S
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