3DG182 Todos los transistores

3DG183 NPN A B C D E PCM TA=25 700 mW ICM 100 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 300 350 400 450 500 V V(BR)CEO ICE=0.1mA 300 350 400 450 500 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 2.0 A IE

2SC1815(3DG1815) NPN /SILICON NPN TRANSISTOR , Purpose Audio frequency general purpose ,driver stage amplifier applications. , , h , , 2SA1015(3CG1015) FE Features High voltage and high current, excellent h linearity ,low noise ,complementary FE p

2SC1815M(3DG1815M) NPN /SILICON NPN TRANSISTOR , /Purpose Audio frequency general purpose, driver stage amplifier applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 60 V CBO V 50 V CEO V 5.0 V EBO I 150 mA C I 50 mA B P 300 mW C T

2SC1809(3DG1809) NPN /SILICON NPN TRANSISTOR Purpose FM radio RF amplifier applications. f T Features High f , low output capacitance, low base time constant and high gain, T excellent noise characteristics. /A

2SC1859(3DG1859) NPN /SILICON NPN TRANSISTOR Purpose Medium power amplifier applications. 2SB1238(3CA1238) Features High breakdown voltage high current complementary pair with 2SB1238(3CA1238). /Absolute maximum ratings(Ta=25 ) Symbol R

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG181, 3DG182 NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal am

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG180 NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplificat