3DG182 Datasheet and Replacement

3DG182 NPN A B C D E PCM 700 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 100 140 180 220 V V(BR)CEO ICE=0.1mA 60 100 140 180 220 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 2.0 A IEBO VEB=2V

3DG183 NPN A B C D E PCM TA=25 700 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 300 350 400 450 500 V V(BR)CEO ICE=0.1mA 300 350 400 450 500 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 2.0 A IE

2SC1815(3DG1815) NPN /SILICON NPN TRANSISTOR :, Purpose: Audio frequency general purpose ,driver stage amplifier applications. :,, h ,, 2SA1015(3CG1015) FEFeatures: High voltage and high current, excellent h linearity ,low noise ,complementary FEp

2SC1815M(3DG1815M) NPN /SILICON NPN TRANSISTOR :,/Purpose: Audio frequency general purpose, driver stage amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 50 V CEO V 5.0 V EBO I 150 mA C I 50 mA B P 300 mW C T

2SC1809(3DG1809) NPN /SILICON NPN TRANSISTOR : Purpose: FM radio RF amplifier applications. :f TFeatures: High f , low output capacitance, low base time constant and high gain, T excellent noise characteristics. /A

2SC1859(3DG1859) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power amplifier applications. 2SB1238(3CA1238) Features: High breakdown voltagehigh currentcomplementary pair with 2SB1238(3CA1238). /Absolute maximum ratings(Ta=25) Symbol R

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG181, 3DG182 NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal am

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG180NPN Silicon High Reverse Voltage High Frequency Middle Power TransistorFeatures: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplificat