3DG2873 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 3DG2873
   Código: HMO_HMY
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 30 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: SOT89

Búsqueda de reemplazo de transistor bipolar 3DG2873

3DG2873 Datasheet (PDF)

..1. Size:262K lzg
3dg2873.pdf

2SC2873(3DG2873) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier and switching applications. : , 2SA1213(3CG1213) Features: Low collector saturation voltage, High speed switching time, small flat package, Complementary to 2SA1213(3CG1213).

8.1. Size:264K lzg
3dg2878.pdf

2SC2878(3DG2878) NPN /SILICON NPN TRANSISTOR :/Purpose: For muting and switching applications. :, /Features: High reverse h reverse: FEh =150(V =-2V,I =-2mA),low on resistance. FE CE C/Absolute maximum ratings(Ta=25) Symbol Rating

9.1. Size:373K foshan
3dg2881a.pdf

2SC2881A(3DG2881A) NPN /SILICON NPN TRANSISTOR : Purpose: power amplifier applications. ,, 2SA1201A(3CG1201A) Features: High f , high V , small flat package, complementary pair with 2SA1201A(3CG1201A). T CEO/Absolute maximum ratings(Ta=25)

9.2. Size:454K foshan
3dg2881.pdf

2SC2881(3DG2881) NPN /SILICON NPN TRANSISTOR : Purpose: power amplifier applications. ,, 2SA1201(3CG1201) Features: High f , high V , small flat package, complementary pair with 2SA1201(3CG1201). T CEO/Absolute maximum ratings(Ta=25)

9.3. Size:305K foshan
3dg2812.pdf

2SC2812(3DG2812) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency general-purpose amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 55 V CBO V 50 V CEO V 5.0 V EBO I 150 mA C I 300 mA cp P 200 mW C T 150 j T -55150

9.4. Size:301K foshan
3dg2884.pdf

2SC2884(3DG2884) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency amplifier applications. : h , 1W , 2SA1204(3CG1204) FE,Features: High h , for out stage of 1 watts amplifier, complementary to 2SA1204(3CG1204). FE/Absolute maximum ratings(Ta=25) Sym

9.5. Size:200K lzg
3dg2839.pdf

2SC2839(3DG2839) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency general amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 20 V CEO V 5.0 V EBO I 30 mA C P (Ta=25) 150 mW C T 150 j T -55150 stg

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: FJP13009 | 2N1508

Liste

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