All Transistors. 3DG2873 Datasheet

 

3DG2873 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG2873

SMD Transistor Code: HMO_HMY

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: SOT89

3DG2873 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG2873 Datasheet (PDF)

1.1. 3dg2873.pdf Size:262K _china

3DG2873
3DG2873

2SC2873(3DG2873) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于功率开关和放大。 Purpose: Power amplifier and switching applications. 特点: 饱和压降低,高速开关时间,体积小,可与 2SA1213(3CG1213)互补。 Features: Low collector saturation voltage, High speed switching time, small flat package, Complementary to 2SA1213(3CG1213). 极限参

4.1. 3dg2878.pdf Size:264K _china

3DG2873
3DG2873

2SC2878(3DG2878) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于抑制及开关电路。/Purpose: For muting and switching applications. 特点:反向直流电流增益高, 导通电阻低。/Features: High reverse h reverse: FE h =150(V =-2V,I =-2mA),low on resistance. FE CE C 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating

 5.1. 3dg2881.pdf Size:454K _china

3DG2873
3DG2873

2SC2881(3DG2881) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于一般功率放大。 Purpose: power amplifier applications. 特点:特征频率高,电压高,封装小, 与 2SA1201(3CG1201)互补。 Features: High f , high V , small flat package, complementary pair with 2SA1201(3CG1201). T CEO 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值

5.2. 3dg2812.pdf Size:305K _china

3DG2873
3DG2873

2SC2812(3DG2812) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于普通低频放大。 Purpose: Low frequency general-purpose amplifier applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 55 V CBO V 50 V CEO V 5.0 V EBO I 150 mA C I 300 mA cp P 200 mW C T 150 ℃ j T -55~150 ℃

 5.3. 3dg2884.pdf Size:301K _china

3DG2873
3DG2873

2SC2884(3DG2884) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频放大。 Purpose: Audio frequency amplifier applications. 特点:高 h ,可得 1W 输出,与 2SA1204(3CG1204)互补。 FE, Features: High h , for out stage of 1 watts amplifier, complementary to 2SA1204(3CG1204). FE 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Sym

5.4. 3dg2839.pdf Size:200K _china

3DG2873
3DG2873

2SC2839(3DG2839) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频放大。 Purpose: High frequency general amplifier applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 30 V CBO V 20 V CEO V 5.0 V EBO I 30 mA C P (Ta=25℃) 150 mW C T 150 ℃ j T -55~150 ℃ stg 电性能参

 5.5. 3dg2881a.pdf Size:373K _china

3DG2873
3DG2873

2SC2881A(3DG2881A) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于一般功率放大。 Purpose: power amplifier applications. 特点:特征频率高,电压高,封装小, 与 2SA1201A(3CG1201A)互补。 Features: High f , high V , small flat package, complementary pair with 2SA1201A(3CG1201A). T CEO 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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