3DG3355
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DG3355
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 12
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 6500
MHz
Capacitancia de salida (Cc): 0.65
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
TO92
3DG3355
Datasheet (PDF)
..1. Size:174K foshan
3dg3355.pdf 
2SC3355(3DG3355) NPN /SILICON NPN TRANSISTOR : Purpose: low noise amplifier at VHF, UHF and CATV band applications. : Features: Low noise and high power gain. /Absolute maximum ratings(Ta=25) Symbol Rating U
8.1. Size:161K china
3dg3356.pdf
2SC3356(3DG3356) NPN /SILION NPN TRANSISTOR : Purpose: low noise amplifier at VHF, UHF and CATV band applications. : Features: Low noise and high power gain. /Absolute maximum ratings(Ta=25) Symbol Rating Uni
8.2. Size:202K foshan
3dg3357.pdf
2SC3357(3DG3357) NPN /SILICON NPN TRANSISTOR : Purpose: low noise amplifier at VHF, UHF and CATV band applications. :,, Features: Low noise and high gain, large P in small package. C/Absolute maximum ratings(Ta=25)
9.1. Size:112K jiangsu
3dg3332.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DG3332 TRANSISTOR (NPN) TO 92 FEATURES 1.EMITTER Low Current High Voltage2. COLLECTOR 3.BASE APPLICATIONS Video Telephony Professional Communication Equipment MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180
9.2. Size:111K china
3dg3399.pdf
3DG3399(2SC3399) NPN PCM TA=25 300 mW ICM 100 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.01m 50 V A V(BR)CEO ICE=0.1mA 50 V V(BR)EBO IEB=0.1mA 10 V ICBO VCB=40V 0.1 A ICEO VCB=40V 0.5 A IEBO VEB=5V 80 A IC=5mA VCEsat 0.3 V
9.3. Size:314K foshan
3dg3326.pdf
2SC3326(3DG3326) NPN /SILICON NPN TRANSISTOR :/Purpose: For muting and switching applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 50 V CBO V 20 V CEO V 12 V EBO I 300 mA C I 60 mA B P 150 mW C T 150 j T -55150 stg /Electrical ch
9.4. Size:291K lzg
3dg3330.pdf
2SC3330(3DG3330) NPN /SILION NPN TRANSISTOR : Purpose: Capable of being used in the low frequency to high frequency range. :/Features: Large current capacity and wide ASO. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V
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