All Transistors. 3DG3355 Datasheet

 

3DG3355 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG3355

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 6500 MHz

Collector Capacitance (Cc): 0.65 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO92

3DG3355 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG3355 Datasheet (PDF)

1.1. 3dg3355.pdf Size:174K _china

3DG3355
3DG3355

2SC3355(3DG3355) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 用于甚高频、超高频和有线电视频段的低噪声放大。 Purpose: low noise amplifier at VHF, UHF and CATV band applications. 特点:低噪声和高功率增益。 Features: Low noise and high power gain. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating U

4.1. 3dg3357.pdf Size:202K _china

3DG3355
3DG3355

2SC3357(3DG3357) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 用于甚高频、超高频和有线电视频段的低噪声放大。 Purpose: low noise amplifier at VHF, UHF and CATV band applications. 特点:低噪声,高增益,小封装功耗大。 Features: Low noise and high gain, large P in small package. C 极限参数/Absolute maximum ratings(Ta=25℃) 参数符

4.2. 3dg3356.pdf Size:161K _china

3DG3355
3DG3355

2SC3356(3DG3356) 硅 NPN 半导体三极管/SILION NPN TRANSISTOR 用途:用于甚高频、超高频和有线电视频段的低噪声放大。 Purpose: low noise amplifier at VHF, UHF and CATV band applications. 特点:低噪声和高功率增益。 Features: Low noise and high power gain. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Uni

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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