3DG3841 Todos los transistores

 

3DG3841 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3DG3841
   Código: HT62_HT63_HT64
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 25 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.03 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 2500 MHz
   Capacitancia de salida (Cc): 0.85 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar 3DG3841

 

3DG3841 Datasheet (PDF)

 ..1. Size:187K  foshan
3dg3841.pdf

3DG3841
3DG3841

2SC3841(3DG3841) NPN /SILICON NPN TRANSISTOR : Purpose: For use as UHF oscillator and a UHF mixer in a turner of a TV receiver. :- Features: High f ,low collector to base time constant, low output capacita

 9.1. Size:324K  foshan
3dg3838k.pdf

3DG3841
3DG3841

2SC3838K(3DG3838K) NPN /SILICON NPN TRANSISTOR :, Features: High f small NF. T, /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 20 V CBO V 11 V CEO V 3.0 V EBO I 50 mA C P 200 mW C T 150 j T -55150 stg /Electrical charac

 9.2. Size:196K  lzg
3dg380tm.pdf

3DG3841
3DG3841

2SC380TM(3DG380TM) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency amplifier applications. ::G =29dB()(f=10.7MHz) peFeatures: High power Gain: G =29dB(Typ.)(f=10.7MHz). pe/Absolute Maximum Ratings(Ta=25) Symbol Rating Unit VCBO 35 V V 30 V

 9.3. Size:207K  lzg
3dg383tm.pdf

3DG3841
3DG3841

2SC383TM(3DG383TM) NPN /SILICON NPN TRANSISTOR : Purpose:TV final picture IF amplifier applications. ::G =33dB()(f=45MHz),h pe FEFeatures:High gain: G =33dB(Typ)(f=45MHz),good linearity of h . pe FE/Absolute Maximum Ratings(Ta=25) Symbol R

 9.4. Size:201K  lzg
3dg388atm.pdf

3DG3841
3DG3841

2SC388ATM(3DG388ATM) NPN /SILICON NPN TRANSISTOR : Purpose: TV final picture IF amplifier applications. ::G =33dB()(f=45MHz),h pe FEFeatures: High gain: G =33dB(Typ)(f=45MHz),good linearity of h . pe FE/Absolute Maximum Ratings(Ta=25) Symb

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: BSR52 | CV7461 | MBT35200MT1G

 

 
Back to Top