All Transistors. 3DG3841 Datasheet

 

3DG3841 Datasheet and Replacement


   Type Designator: 3DG3841
   SMD Transistor Code: HT62_HT63_HT64
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2500 MHz
   Collector Capacitance (Cc): 0.85 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: SOT23
 

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3DG3841 Datasheet (PDF)

 ..1. Size:187K  foshan
 3dg3841.pdf pdf_icon

3DG3841

2SC3841(3DG3841) NPN /SILICON NPN TRANSISTOR : Purpose: For use as UHF oscillator and a UHF mixer in a turner of a TV receiver. :- Features: High f ,low collector to base time constant, low output capacita

 9.1. Size:324K  foshan
 3dg3838k.pdf pdf_icon

3DG3841

2SC3838K(3DG3838K) NPN /SILICON NPN TRANSISTOR :, Features: High f small NF. T, /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 20 V CBO V 11 V CEO V 3.0 V EBO I 50 mA C P 200 mW C T 150 j T -55150 stg /Electrical charac

 9.2. Size:196K  lzg
 3dg380tm.pdf pdf_icon

3DG3841

2SC380TM(3DG380TM) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency amplifier applications. ::G =29dB()(f=10.7MHz) peFeatures: High power Gain: G =29dB(Typ.)(f=10.7MHz). pe/Absolute Maximum Ratings(Ta=25) Symbol Rating Unit VCBO 35 V V 30 V

 9.3. Size:207K  lzg
 3dg383tm.pdf pdf_icon

3DG3841

2SC383TM(3DG383TM) NPN /SILICON NPN TRANSISTOR : Purpose:TV final picture IF amplifier applications. ::G =33dB()(f=45MHz),h pe FEFeatures:High gain: G =33dB(Typ)(f=45MHz),good linearity of h . pe FE/Absolute Maximum Ratings(Ta=25) Symbol R

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Keywords - 3DG3841 transistor datasheet

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