3DG3841 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

3DG3841 Specs and Replacement

Type Designator: 3DG3841

SMD Transistor Code: HT62_HT63_HT64

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 2500 MHz

Collector Capacitance (Cc): 0.85 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT23

3DG3841 Substitution

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3DG3841 datasheet

..1. Size:187K foshan

3dg3841.pdf pdf_icon

2SC3841(3DG3841) NPN /SILICON NPN TRANSISTOR Purpose For use as UHF oscillator and a UHF mixer in a turner of a TV receiver. - Features High f ,low collector to base time constant, low output capacita... See More ⇒

9.1. Size:324K foshan

3dg3838k.pdf pdf_icon

2SC3838K(3DG3838K) NPN /SILICON NPN TRANSISTOR , Features High f small NF. T, /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 20 V CBO V 11 V CEO V 3.0 V EBO I 50 mA C P 200 mW C T 150 j T -55 150 stg /Electrical charac... See More ⇒

9.2. Size:196K lzg

3dg380tm.pdf pdf_icon

2SC380TM(3DG380TM) NPN /SILICON NPN TRANSISTOR Purpose High frequency amplifier applications. G =29dB( )(f=10.7MHz) pe Features High power Gain G =29dB(Typ.)(f=10.7MHz). pe /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO 35 V V 30 V ... See More ⇒

9.3. Size:207K lzg

3dg383tm.pdf pdf_icon

2SC383TM(3DG383TM) NPN /SILICON NPN TRANSISTOR Purpose TV final picture IF amplifier applications. G =33dB( )(f=45MHz),h pe FE Features High gain G =33dB(Typ)(f=45MHz),good linearity of h . pe FE /Absolute Maximum Ratings(Ta=25 ) Symbol R... See More ⇒