3DG4 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

3DG4 NPN A B C D E F G PCM 300 mW ICM 30 mA Tjm 175 Tstg -55~150 V(BR)CBO ICE=0.1mA 20 30 40 20 30 40 50 V V(BR)CEO ICE=0.1mA 15 20 30 15 20 30 40 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCE=10V 0.1 A ICEO VCE=10V 0.1 A IEBO

NPN R 3DG40005 AS-H 3DG40005 AS-H EB VEBO>20V NPN VCEO 400 V IC 50 mA hFE Ptot Ta=25 0.3 W

NPN R 3DG44 3DG44 NPN VCEO 400 V IC 0.3 A Ptot Ta=25 0.625 W

3DG42 NPN PCM TA=25 300 mW ICM 500 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1A 300 V V(BR)CEO ICE=1.0mA 300 V V(BR)EBO IEB=0.1A 6.0 V ICBO VCB=200V 100 nA IEBO VEB=6V 100 nA VBEsat IC=20mA 0.5 V IB=2mA VCEsat 0.9 VCE=10V hFE 40 IC=10mA

2SC458(3DG458) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency amplifier. :2SA1029(3CG1029) Features: Complementary pair with 2SA1029(3CG1029). /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 30 V CEO V 5.0 V EBO I 100 mA C I -100 mA E

2SC4081(3DG4081) NPN /SILICON NPN TRANSISTOR : Purpose: General amplifier. : Features: Low C ob./Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 50 V CEO V 7.0 V EBO I 150 mA C P 200 mW C T 150 j T -55150

2SC4115S(3DG4115S) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier. : 2SA1585S(3CG1585S) Features: Low V ,excellent current gain characteristicscomplementary pair with CE(sat)2SA1585S(3CG1585S). /Absolute maximum ratings(Ta=25)

2N4401(3DG4401) NPN /SILICON NPN TRANSISTOR : I 500mA CPurpose: Medium power amplifier and switch requiring collector currents up to 500 mA. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 40 V CEO V 6.0 V EBO I 600 mA C P 625

2SC4155(3DG4155) 2SC4155A(3DG4155A) NPN /SILICON NPN TRANSISTOR : /Purpose: For hybrid IC,small type machine low frequency voltage amplify application. - Vce sat =0.3Vmax SOT-23 ( )/Feature:Small collectoe to e

2SC4081W(3DG4081W) NPN /SILICON NPN TRANSISTOR : Purpose: General amplifier. : Features: Low C ob./Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 50 V CEO V 7.0 V EBO I 150 mA C P 200 mW C T 150 j T -55150

2SC4097(3DG4097) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power transistor. :, 2SA1577(3CG1577) Features: Low C , complements the 2SA1577(3CG1577). ob/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 40 V CBO V 32 V CEO V 5.0

2SC4003(3DG4003) NPN /SILICON NPN TRANSISTOR Purpose: High voltage driver applications. MBIT FeaturesHigh breakdown voltage, adoption of MBIT process excellent h linearity. FE/Absolute maximum ratings(Ta=25)