3DK8 Todos los transistores

3DK8 NPN A B C D E PCM TC=25 500 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 40 60 20 40 V V(BR)CEO ICE=0.1mA 15 30 45 15 30 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V 0.5 A IEBO VEB

October 2010 HUFA76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56m General Description These N-Channel power MOSFETs are manufactured us- Applications ing the innovative UltraFET process. This advanced pro- Motor and Load Control cess technology achieves the lowest possible on- resistance per silicon area, resulting in outstanding perfor- Powertr

HUF76113DK8 TM Data Sheet June 2000 File Number 4387.5 6A, 30V, 0.032 Ohm, Dual N-Channel, Features Logic Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 6A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.032 UltraFET process. This advanced process technology achieves the Temperature Compensating PS