3DK8 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

3DK8 Specs and Replacement

Type Designator: 3DK8

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO18

3DK8 Substitution

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3DK8 datasheet

..1. Size:147K china

3dk8.pdf pdf_icon

3DK8 NPN A B C D E PCM TC=25 500 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 40 60 20 40 V V(BR)CEO ICE=0.1mA 15 30 45 15 30 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V 0.5 A IEBO VEB... See More ⇒

0.1. Size:617K fairchild semi

hufa76413dk8t f085.pdf pdf_icon

October 2010 HUFA76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56m General Description These N-Channel power MOSFETs are manufactured us- Applications ing the innovative UltraFET process. This advanced pro- Motor and Load Control cess technology achieves the lowest possible on- resistance per silicon area, resulting in outstanding perfor- Powertr... See More ⇒

0.2. Size:219K intersil

huf76113dk8.pdf pdf_icon

HUF76113DK8 TM Data Sheet June 2000 File Number 4387.5 6A, 30V, 0.032 Ohm, Dual N-Channel, Features Logic Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 6A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.032 UltraFET process. This advanced process technology achieves the Temperature Compensating PS... See More ⇒

Detailed specifications: 3DK4, 3DK402, 3DK405, 3DK40B, 3DK50, 3DK5886, 3DK5E, 3DK7, D880, 3DK9, 3N1151GP, 3N13003GP, 3N440GP, 3N772GP, 3N882GP, 3RA2114, 3SC2655