All Transistors. 3DK8 Datasheet

 

3DK8 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DK8

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO18

3DK8 Transistor Equivalent Substitute - Cross-Reference Search

 

3DK8 Datasheet (PDF)

1.1. hufa76413dk8t f085.pdf Size:617K _fairchild_semi

3DK8
3DK8

October 2010 HUFA76413DK8T_F085 N-Channel Logic Level UltraFET® Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured us- Applications ing the innovative UltraFET® process. This advanced pro- • Motor and Load Control cess technology achieves the lowest possible on- resistance per silicon area, resulting in outstanding perfor- • Powertr

1.2. huf76113dk8.pdf Size:219K _intersil

3DK8
3DK8

HUF76113DK8 TM Data Sheet June 2000 File Number 4387.5 6A, 30V, 0.032 Ohm, Dual N-Channel, Features Logic Level UltraFET Power MOSFET • Logic Level Gate Drive This N-Channel power MOSFET is • 6A, 30V ® manufactured using the innovative • Ultra Low On-Resistance, rDS(ON) = 0.032Ω UltraFET process. This advanced process technology achieves the • Temperature Compensating PS

 1.3. 3dk8.pdf Size:147K _china

3DK8

3DK8 型 NPN 硅小功率开关晶体管 规范值 参数符号 测试条件 单位 A B C D E PCM TC=25℃ 500 mW 极 ICM 300 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥20 ≥40 ≥60 ≥20 ≥40 V V(BR)CEO ICE=0.1mA ≥15 ≥30 ≥45 ≥15 ≥30 V V(BR)EBO IEB=0.1mA ≥5.0 V ICBO VCB=10V ≤0.2 μA 直 ICEO VCE=10V ≤0.5 μA 流 参 IEBO VEB

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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