All Transistors. 3DK8 Datasheet

 

3DK8 Datasheet and Replacement


   Type Designator: 3DK8
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO18
 

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3DK8 Datasheet (PDF)

 ..1. Size:147K  china
 3dk8.pdf pdf_icon

3DK8

3DK8 NPN A B C D E PCM TC=25 500 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 40 60 20 40 V V(BR)CEO ICE=0.1mA 15 30 45 15 30 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V 0.5 A IEBO VEB

 0.1. Size:617K  fairchild semi
 hufa76413dk8t f085.pdf pdf_icon

3DK8

October 2010HUFA76413DK8T_F085N-Channel Logic Level UltraFET Power MOSFET60V, 4.8A, 56mGeneral DescriptionThese N-Channel power MOSFETs are manufactured us-Applicationsing the innovative UltraFET process. This advanced pro- Motor and Load Controlcess technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding perfor- Powertr

 0.2. Size:219K  intersil
 huf76113dk8.pdf pdf_icon

3DK8

HUF76113DK8TMData Sheet June 2000 File Number 4387.56A, 30V, 0.032 Ohm, Dual N-Channel, FeaturesLogic Level UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 6A, 30Vmanufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.032UltraFET process. This advancedprocess technology achieves the Temperature Compensating PS

Datasheet: 3DK4 , 3DK402 , 3DK405 , 3DK40B , 3DK50 , 3DK5886 , 3DK5E , 3DK7 , 2SD669A , 3DK9 , 3N1151GP , 3N13003GP , 3N440GP , 3N772GP , 3N882GP , 3RA2114 , 3SC2655 .

History: 3DK9

Keywords - 3DK8 transistor datasheet

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