3N1151GP Todos los transistores

 

3N1151GP Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3N1151GP

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.25 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO126

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3N1151GP datasheet

 ..1. Size:132K  chenmko
 3n1151gp.pdf pdf_icon

3N1151GP

CHENMKO ENTERPRISE CO.,LTD 3N1151GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 60 Volts CURRENT 5 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (TO-126) TO-126 * Low collector-emitter saturation voltage * Large collector current .114(2.90) .307(7.80) * High power dissipation .059(1.50) .098(2.50) .291(7.40) .043(1.10) .161(4.10

 9.1. Size:769K  way-on
 wm03n115a.pdf pdf_icon

3N1151GP

WM03N115A 30V N-Channel Enhancement Mode Power MOSFET Description D D WM03N115A uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S S Features S G V = 30V, I = 11.5A DS D SOP-8L R

Otros transistores... 3DK405 , 3DK40B , 3DK50 , 3DK5886 , 3DK5E , 3DK7 , 3DK8 , 3DK9 , D209L , 3N13003GP , 3N440GP , 3N772GP , 3N882GP , 3RA2114 , 3SC2655 , 3STF1640 , 3STL2540 .

History: 2N718 | BC214L | 2SB1127T | BC275 | KT6112A | 2SA1605

 

 

 

 

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