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3N1151GP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3N1151GP
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.25 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO126
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3N1151GP Datasheet (PDF)

 ..1. Size:132K  chenmko
 3n1151gp.pdf pdf_icon

3N1151GP

CHENMKO ENTERPRISE CO.,LTD3N1151GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 60 Volts CURRENT 5 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (TO-126)TO-126* Low collector-emitter saturation voltage * Large collector current .114(2.90).307(7.80)* High power dissipation .059(1.50).098(2.50).291(7.40).043(1.10).161(4.10

 9.1. Size:769K  way-on
 wm03n115a.pdf pdf_icon

3N1151GP

WM03N115A 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDWM03N115A uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = 30V, I = 11.5A DS DSOP-8LR

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2SB1387 | 2SB1216R | LH8550QLT1G | LMUN5112DW1T1G | 2SB1208

 

 
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