All Transistors. 3N1151GP Datasheet

 

3N1151GP Datasheet, Equivalent, Cross Reference Search

Type Designator: 3N1151GP

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 1.25 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO126

3N1151GP Transistor Equivalent Substitute - Cross-Reference Search

 

3N1151GP Datasheet (PDF)

1.1. 3n1151gp.pdf Size:132K _china

3N1151GP
3N1151GP

CHENMKO ENTERPRISE CO.,LTD 3N1151GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 60 Volts CURRENT 5 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (TO-126) TO-126 * Low collector-emitter saturation voltage * Large collector current .114(2.90) .307(7.80) * High power dissipation .059(1.50) .098(2.50) .291(7.40) .043(1.10) .161(4.10

Datasheet: D32P3 , D32P4 , D32S1 , D32S10 , D32S2 , D32S3 , D32S4 , D32S5 , 2N2222 , D32S7 , D32S8 , D32S9 , D32W10 , D32W11 , D32W12 , D32W13 , D32W14 .

 
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