3N1151GP Datasheet and Replacement
Type Designator: 3N1151GP
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO126
3N1151GP Substitution
3N1151GP Datasheet (PDF)
3n1151gp.pdf

CHENMKO ENTERPRISE CO.,LTD3N1151GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 60 Volts CURRENT 5 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (TO-126)TO-126* Low collector-emitter saturation voltage * Large collector current .114(2.90).307(7.80)* High power dissipation .059(1.50).098(2.50).291(7.40).043(1.10).161(4.10
wm03n115a.pdf

WM03N115A 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDWM03N115A uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = 30V, I = 11.5A DS DSOP-8LR
Datasheet: 3DK405 , 3DK40B , 3DK50 , 3DK5886 , 3DK5E , 3DK7 , 3DK8 , 3DK9 , BC556 , 3N13003GP , 3N440GP , 3N772GP , 3N882GP , 3RA2114 , 3SC2655 , 3STF1640 , 3STL2540 .
History: SGS6387 | 2SC1326 | NPS753 | 2SC3998 | 2SB1194 | 2SC3992M | KSA1201Y
Keywords - 3N1151GP transistor datasheet
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History: SGS6387 | 2SC1326 | NPS753 | 2SC3998 | 2SB1194 | 2SC3992M | KSA1201Y



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