3N1151GP Specs and Replacement
Type Designator: 3N1151GP
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO126
3N1151GP Substitution
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3N1151GP datasheet
CHENMKO ENTERPRISE CO.,LTD 3N1151GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 60 Volts CURRENT 5 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (TO-126) TO-126 * Low collector-emitter saturation voltage * Large collector current .114(2.90) .307(7.80) * High power dissipation .059(1.50) .098(2.50) .291(7.40) .043(1.10) .161(4.10... See More ⇒
WM03N115A 30V N-Channel Enhancement Mode Power MOSFET Description D D WM03N115A uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S S Features S G V = 30V, I = 11.5A DS D SOP-8L R ... See More ⇒
Detailed specifications: 3DK405, 3DK40B, 3DK50, 3DK5886, 3DK5E, 3DK7, 3DK8, 3DK9, D209L, 3N13003GP, 3N440GP, 3N772GP, 3N882GP, 3RA2114, 3SC2655, 3STF1640, 3STL2540
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