All Transistors. 3N1151GP Datasheet

 

3N1151GP Datasheet and Replacement


   Type Designator: 3N1151GP
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO126
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3N1151GP Datasheet (PDF)

 ..1. Size:132K  chenmko
 3n1151gp.pdf pdf_icon

3N1151GP

CHENMKO ENTERPRISE CO.,LTD3N1151GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 60 Volts CURRENT 5 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (TO-126)TO-126* Low collector-emitter saturation voltage * Large collector current .114(2.90).307(7.80)* High power dissipation .059(1.50).098(2.50).291(7.40).043(1.10).161(4.10

 9.1. Size:769K  way-on
 wm03n115a.pdf pdf_icon

3N1151GP

WM03N115A 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDWM03N115A uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = 30V, I = 11.5A DS DSOP-8LR

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: D40PU1 | MPS5135 | BD133 | GFT20 | 40250 | STC221F | 2SB746

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