PH1113-100 Todos los transistores

 

PH1113-100 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PH1113-100
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 350 W
   Tensión colector-emisor (Vce): 70 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 9 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1300 MHz
   Ganancia de corriente contínua (hfe): 8
   Paquete / Cubierta: CERAMIC
 

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PH1113-100 Datasheet (PDF)

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 ph1113-100.pdf pdf_icon

PH1113-100

PH1113-100 Radar Pulsed Power Transistor M/A-COM Products 100W, 1.1-1.3 GHz, 3s Pulse, 30% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Interna

 9.1. Size:235K  toshiba
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PH1113-100

TPH1110ENHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH1110ENHTPH1110ENHTPH1110ENHTPH1110ENH1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 2.6 nC (typ.)(3) Low drain-source on-resista

 9.2. Size:231K  toshiba
 tph1110fnh.pdf pdf_icon

PH1113-100

TPH1110FNHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH1110FNHTPH1110FNHTPH1110FNHTPH1110FNH1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 4.2 nC (typ.)(3) Low drain-source on-resista

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: TP3392

 

 
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