PH1113-100 Datasheet, Equivalent, Cross Reference Search

   Type Designator: PH1113-100
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 350 W
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 9 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1300 MHz
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: CERAMIC

PH1113-100 Transistor Equivalent Substitute - Cross-Reference Search

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