PH1113-100 Datasheet and Replacement
Type Designator: PH1113-100
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 350 W
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 9 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1300 MHz
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: CERAMIC
PH1113-100 Substitution
PH1113-100 Datasheet (PDF)
ph1113-100.pdf

PH1113-100 Radar Pulsed Power Transistor M/A-COM Products 100W, 1.1-1.3 GHz, 3s Pulse, 30% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Interna
tph1110enh.pdf

TPH1110ENHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH1110ENHTPH1110ENHTPH1110ENHTPH1110ENH1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 2.6 nC (typ.)(3) Low drain-source on-resista
tph1110fnh.pdf

TPH1110FNHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH1110FNHTPH1110FNHTPH1110FNHTPH1110FNH1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 4.2 nC (typ.)(3) Low drain-source on-resista
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: PDTC144WK | CS4013 | 2SC1860 | KSH30C | MJE5192 | TP2713 | KSD569
Keywords - PH1113-100 transistor datasheet
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History: PDTC144WK | CS4013 | 2SC1860 | KSH30C | MJE5192 | TP2713 | KSD569



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