PH1113-100 Specs and Replacement
Type Designator: PH1113-100
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 350 W
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 9 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1300 MHz
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: CERAMIC
PH1113-100 Substitution
PH1113-100 datasheet
ph1113-100.pdf
PH1113-100 Radar Pulsed Power Transistor M/A-COM Products 100W, 1.1-1.3 GHz, 3 s Pulse, 30% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Interna... See More ⇒
tph1110enh.pdf
TPH1110ENH MOSFETs Silicon N-channel MOS (U-MOS -H) TPH1110ENH TPH1110ENH TPH1110ENH TPH1110ENH 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 2.6 nC (typ.) (3) Low drain-source on-resista... See More ⇒
tph1110fnh.pdf
TPH1110FNH MOSFETs Silicon N-channel MOS (U-MOS -H) TPH1110FNH TPH1110FNH TPH1110FNH TPH1110FNH 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 4.2 nC (typ.) (3) Low drain-source on-resista... See More ⇒
Detailed specifications: 3STL2540 , PH0814-40 , PH1090-15L , PH1090-175L , PH1090-350L , PH1090-55S , PH1090-700B , PH1090-75L , TIP142 , PH1214-0.85L , PH1214-100EL , PH1214-110M , PH1214-12M , PH1214-220M , PH1214-25L , PH1214-25M , PH1214-2M .
Keywords - PH1113-100 pdf specs
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