PH3135-20M
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PH3135-20M
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200
W
Tensión colector-emisor (Vce): 65
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 2.4
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3500
MHz
Ganancia de corriente contínua (hfe): 7.5
Paquete / Cubierta: CERAMIC
Búsqueda de reemplazo de transistor bipolar PH3135-20M
PH3135-20M
Datasheet (PDF)
..1. Size:102K macom
ph3135-20m.pdf 
PH3135-20M Radar Pulsed Power Transistor M/A-COM Products 20W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
6.1. Size:95K macom
ph3135-25s.pdf
PH3135-25S Radar Pulsed Power Transistor M/A-COM Products 25W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal
7.1. Size:94K macom
ph3135-90s.pdf
PH3135-90S Radar Pulsed Power Transistor M/A-COM Products 90W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal
7.2. Size:101K macom
ph3135-65m.pdf
PH3135-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
7.3. Size:101K macom
ph3135-5m.pdf
PH3135-5M Radar Pulsed Power Transistor M/A-COM Products 5W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
