PH3135-20M Todos los transistores

 

PH3135-20M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PH3135-20M
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-emisor (Vce): 65 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 2.4 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3500 MHz
   Ganancia de corriente contínua (hfe): 7.5
   Paquete / Cubierta: CERAMIC
 

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PH3135-20M Datasheet (PDF)

 ..1. Size:102K  macom
ph3135-20m.pdf pdf_icon

PH3135-20M

PH3135-20M Radar Pulsed Power Transistor M/A-COM Products 20W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 6.1. Size:95K  macom
ph3135-25s.pdf pdf_icon

PH3135-20M

PH3135-25S Radar Pulsed Power Transistor M/A-COM Products 25W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.1. Size:94K  macom
ph3135-90s.pdf pdf_icon

PH3135-20M

PH3135-90S Radar Pulsed Power Transistor M/A-COM Products 90W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.2. Size:101K  macom
ph3135-65m.pdf pdf_icon

PH3135-20M

PH3135-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TPCP8603 | KF630S | BF550 | PHPT61002PYCLH

 

 
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