Справочник транзисторов. PH3135-20M

 

Биполярный транзистор PH3135-20M Даташит. Аналоги


   Наименование производителя: PH3135-20M
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 200 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 2.4 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 3500 MHz
   Статический коэффициент передачи тока (hfe): 7.5
   Корпус транзистора: CERAMIC
 

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PH3135-20M Datasheet (PDF)

 ..1. Size:102K  macom
ph3135-20m.pdfpdf_icon

PH3135-20M

PH3135-20M Radar Pulsed Power Transistor M/A-COM Products 20W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 6.1. Size:95K  macom
ph3135-25s.pdfpdf_icon

PH3135-20M

PH3135-25S Radar Pulsed Power Transistor M/A-COM Products 25W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.1. Size:94K  macom
ph3135-90s.pdfpdf_icon

PH3135-20M

PH3135-90S Radar Pulsed Power Transistor M/A-COM Products 90W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.2. Size:101K  macom
ph3135-65m.pdfpdf_icon

PH3135-20M

PH3135-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC3754 | TP2904A | MJE1320 | TP3250A | 2SA607S | TK23A | BC369-16

 

 
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