PH3135-20M
Datasheet, Equivalent, Cross Reference Search
Type Designator: PH3135-20M
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200
W
Maximum Collector-Emitter Voltage |Vce|: 65
V
Maximum Emitter-Base Voltage |Veb|: 3
V
Maximum Collector Current |Ic max|: 2.4
A
Max. Operating Junction Temperature (Tj): 200
°C
Transition Frequency (ft): 3500
MHz
Forward Current Transfer Ratio (hFE), MIN: 7.5
Noise Figure, dB: -
Package: CERAMIC
PH3135-20M
Transistor Equivalent Substitute - Cross-Reference Search
PH3135-20M
Datasheet (PDF)
..1. Size:102K macom
ph3135-20m.pdf
PH3135-20M Radar Pulsed Power Transistor M/A-COM Products 20W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
6.1. Size:95K macom
ph3135-25s.pdf
PH3135-25S Radar Pulsed Power Transistor M/A-COM Products 25W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal
7.1. Size:94K macom
ph3135-90s.pdf
PH3135-90S Radar Pulsed Power Transistor M/A-COM Products 90W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal
7.2. Size:101K macom
ph3135-65m.pdf
PH3135-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
7.3. Size:101K macom
ph3135-5m.pdf
PH3135-5M Radar Pulsed Power Transistor M/A-COM Products 5W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.