PH3135-5M Todos los transistores

 

PH3135-5M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PH3135-5M
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.7 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3500 MHz
   Ganancia de corriente contínua (hfe): 8.5
   Paquete / Cubierta: CERAMIC
 

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PH3135-5M Datasheet (PDF)

 ..1. Size:101K  macom
ph3135-5m.pdf pdf_icon

PH3135-5M

PH3135-5M Radar Pulsed Power Transistor M/A-COM Products 5W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.1. Size:94K  macom
ph3135-90s.pdf pdf_icon

PH3135-5M

PH3135-90S Radar Pulsed Power Transistor M/A-COM Products 90W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.2. Size:95K  macom
ph3135-25s.pdf pdf_icon

PH3135-5M

PH3135-25S Radar Pulsed Power Transistor M/A-COM Products 25W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.3. Size:101K  macom
ph3135-65m.pdf pdf_icon

PH3135-5M

PH3135-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

Otros transistores... PH3134-10M , PH3134-20L , PH3134-25M , PH3134-30S , PH3134-55L , PH3134-65M , PH3135-20M , PH3135-25S , 13009 , PH3135-65M , PH3135-90S , PHPT60406NY , PHPT60406PY , PHPT60410NY , PHPT60410PY , PHPT60415NY , PHPT60415PY .

History: FHT1298O-ME | 2SC1102 | KZT3904 | TN2714 | 2SC3709A | 2SAR514R | BCW60RD

 

 
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