All Transistors. PH3135-5M Datasheet

 

PH3135-5M Datasheet and Replacement


   Type Designator: PH3135-5M
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3500 MHz
   Forward Current Transfer Ratio (hFE), MIN: 8.5
   Noise Figure, dB: -
   Package: CERAMIC
      - BJT Cross-Reference Search

   

PH3135-5M Datasheet (PDF)

 ..1. Size:101K  macom
 ph3135-5m.pdf pdf_icon

PH3135-5M

PH3135-5M Radar Pulsed Power Transistor M/A-COM Products 5W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.1. Size:94K  macom
 ph3135-90s.pdf pdf_icon

PH3135-5M

PH3135-90S Radar Pulsed Power Transistor M/A-COM Products 90W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.2. Size:95K  macom
 ph3135-25s.pdf pdf_icon

PH3135-5M

PH3135-25S Radar Pulsed Power Transistor M/A-COM Products 25W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.3. Size:101K  macom
 ph3135-65m.pdf pdf_icon

PH3135-5M

PH3135-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

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Keywords - PH3135-5M transistor datasheet

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