Справочник транзисторов. PH3135-5M

 

Биполярный транзистор PH3135-5M Даташит. Аналоги


   Наименование производителя: PH3135-5M
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 50 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 0.7 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 3500 MHz
   Статический коэффициент передачи тока (hfe): 8.5
   Корпус транзистора: CERAMIC
 

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PH3135-5M Datasheet (PDF)

 ..1. Size:101K  macom
ph3135-5m.pdfpdf_icon

PH3135-5M

PH3135-5M Radar Pulsed Power Transistor M/A-COM Products 5W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.1. Size:94K  macom
ph3135-90s.pdfpdf_icon

PH3135-5M

PH3135-90S Radar Pulsed Power Transistor M/A-COM Products 90W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.2. Size:95K  macom
ph3135-25s.pdfpdf_icon

PH3135-5M

PH3135-25S Radar Pulsed Power Transistor M/A-COM Products 25W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.3. Size:101K  macom
ph3135-65m.pdfpdf_icon

PH3135-5M

PH3135-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

Другие транзисторы... PH3134-10M , PH3134-20L , PH3134-25M , PH3134-30S , PH3134-55L , PH3134-65M , PH3135-20M , PH3135-25S , 13009 , PH3135-65M , PH3135-90S , PHPT60406NY , PHPT60406PY , PHPT60410NY , PHPT60410PY , PHPT60415NY , PHPT60415PY .

History: BC807-25QA | BF241C

 

 
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