PHPT60406NY Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHPT60406NY  📄📄 

Código: 0406NAB

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 153 MHz

Capacitancia de salida (Cc): 41 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: SOT669

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PHPT60406NY datasheet

 ..1. Size:236K  nxp
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PHPT60406NY

PHPT60406NY 40 V, 6 A NPN high power bipolar transistor 8 December 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60406PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printe

 5.1. Size:230K  nxp
 phpt60406py.pdf pdf_icon

PHPT60406NY

PHPT60406PY 40 V, 6 A PNP high power bipolar transistor 8 December 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60406NY. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

 7.1. Size:233K  nxp
 phpt60410ny.pdf pdf_icon

PHPT60406NY

PHPT60410NY 40 V, 10 A NPN high power bipolar transistor 27 January 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60410PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

 7.2. Size:245K  nxp
 phpt60410py.pdf pdf_icon

PHPT60406NY

PHPT60410PY 40 V, 10 A PNP high power bipolar transistor 21 January 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60410NY 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

MOSTRAR MÁS

Otros transistores... PH3134-30S, PH3134-55L, PH3134-65M, PH3135-20M, PH3135-25S, PH3135-5M, PH3135-65M, PH3135-90S, TIP42C, PHPT60406PY, PHPT60410NY, PHPT60410PY, PHPT60415NY, PHPT60415PY, PHPT60603NY, PHPT60603PY, PHPT60606NY