All Transistors. PHPT60406NY Datasheet

 

PHPT60406NY Datasheet and Replacement


   Type Designator: PHPT60406NY
   SMD Transistor Code: 0406NAB
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 153 MHz
   Collector Capacitance (Cc): 41 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT669
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PHPT60406NY Datasheet (PDF)

 ..1. Size:236K  nxp
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PHPT60406NY

PHPT60406NY40 V, 6 A NPN high power bipolar transistor8 December 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT60406PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printe

 5.1. Size:230K  nxp
 phpt60406py.pdf pdf_icon

PHPT60406NY

PHPT60406PY40 V, 6 A PNP high power bipolar transistor8 December 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT60406NY.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

 7.1. Size:233K  nxp
 phpt60410ny.pdf pdf_icon

PHPT60406NY

PHPT60410NY40 V, 10 A NPN high power bipolar transistor27 January 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT60410PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

 7.2. Size:245K  nxp
 phpt60410py.pdf pdf_icon

PHPT60406NY

PHPT60410PY40 V, 10 A PNP high power bipolar transistor21 January 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.NPN complement: PHPT60410NY2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

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History: CS9011I | BLX65E | LDTA115EET1G

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