PHPT60406NY Datasheet. Specs and Replacement

Type Designator: PHPT60406NY  📄📄 

SMD Transistor Code: 0406NAB

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 153 MHz

Collector Capacitance (Cc): 41 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT669

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PHPT60406NY datasheet

 ..1. Size:236K  nxp

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PHPT60406NY

PHPT60406NY 40 V, 6 A NPN high power bipolar transistor 8 December 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60406PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printe... See More ⇒

 5.1. Size:230K  nxp

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PHPT60406NY

PHPT60406PY 40 V, 6 A PNP high power bipolar transistor 8 December 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60406NY. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C ... See More ⇒

 7.1. Size:233K  nxp

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PHPT60406NY

PHPT60410NY 40 V, 10 A NPN high power bipolar transistor 27 January 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60410PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print... See More ⇒

 7.2. Size:245K  nxp

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PHPT60406NY

PHPT60410PY 40 V, 10 A PNP high power bipolar transistor 21 January 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60410NY 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C ... See More ⇒

Detailed specifications: PH3134-30S, PH3134-55L, PH3134-65M, PH3135-20M, PH3135-25S, PH3135-5M, PH3135-65M, PH3135-90S, TIP42C, PHPT60406PY, PHPT60410NY, PHPT60410PY, PHPT60415NY, PHPT60415PY, PHPT60603NY, PHPT60603PY, PHPT60606NY

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