All Transistors. PHPT60406NY Datasheet

 

PHPT60406NY Datasheet and Replacement


   Type Designator: PHPT60406NY
   SMD Transistor Code: 0406NAB
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 153 MHz
   Collector Capacitance (Cc): 41 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT669

 PHPT60406NY Transistor Equivalent Substitute - Cross-Reference Search

   

PHPT60406NY Datasheet (PDF)

 ..1. Size:236K  nxp
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PHPT60406NY

PHPT60406NY 40 V, 6 A NPN high power bipolar transistor 8 December 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60406PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printe... See More ⇒

 5.1. Size:230K  nxp
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PHPT60406NY

PHPT60406PY 40 V, 6 A PNP high power bipolar transistor 8 December 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60406NY. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C ... See More ⇒

 7.1. Size:233K  nxp
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PHPT60406NY

PHPT60410NY 40 V, 10 A NPN high power bipolar transistor 27 January 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60410PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print... See More ⇒

 7.2. Size:245K  nxp
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PHPT60406NY

PHPT60410PY 40 V, 10 A PNP high power bipolar transistor 21 January 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60410NY 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C ... See More ⇒

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Datasheet: PH3134-30S , PH3134-55L , PH3134-65M , PH3135-20M , PH3135-25S , PH3135-5M , PH3135-65M , PH3135-90S , TIP42C , PHPT60406PY , PHPT60410NY , PHPT60410PY , PHPT60415NY , PHPT60415PY , PHPT60603NY , PHPT60603PY , PHPT60606NY .

History: 2SB927 | SUR553J | NB014HZ | KT837T | 2SC4106L | L8050RLT3G | KTX214E

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