Биполярный транзистор PHPT60406NY - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PHPT60406NY
Маркировка: 0406NAB
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 153 MHz
Ёмкость коллекторного перехода (Cc): 41 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: SOT669
Аналоги (замена) для PHPT60406NY
PHPT60406NY Datasheet (PDF)
phpt60406ny.pdf
PHPT60406NY40 V, 6 A NPN high power bipolar transistor8 December 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT60406PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printe
phpt60406py.pdf
PHPT60406PY40 V, 6 A PNP high power bipolar transistor8 December 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT60406NY.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C
phpt60410ny.pdf
PHPT60410NY40 V, 10 A NPN high power bipolar transistor27 January 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT60410PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print
phpt60410py.pdf
PHPT60410PY40 V, 10 A PNP high power bipolar transistor21 January 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.NPN complement: PHPT60410NY2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C
phpt60415ny.pdf
PHPT60415NY40 V, 15 A NPN high power bipolar transistor27 May 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT60415PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C
phpt60415py.pdf
PHPT60415PY40 V, 15 A PNP high power bipolar transistor27 May 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.NPN complement: PHPT60415NY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C
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