Биполярный транзистор PHPT60406NY - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PHPT60406NY
Маркировка: 0406NAB
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 153 MHz
Ёмкость коллекторного перехода (Cc): 41 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: SOT669
Аналоги (замена) для PHPT60406NY
PHPT60406NY Datasheet (PDF)
phpt60406ny.pdf
PHPT60406NY40 V, 6 A NPN high power bipolar transistor8 December 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT60406PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printe
phpt60406py.pdf
PHPT60406PY40 V, 6 A PNP high power bipolar transistor8 December 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT60406NY.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C
phpt60410ny.pdf
PHPT60410NY40 V, 10 A NPN high power bipolar transistor27 January 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT60410PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print
phpt60410py.pdf
PHPT60410PY40 V, 10 A PNP high power bipolar transistor21 January 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.NPN complement: PHPT60410NY2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C
phpt60415ny.pdf
PHPT60415NY40 V, 15 A NPN high power bipolar transistor27 May 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT60415PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C
phpt60415py.pdf
PHPT60415PY40 V, 15 A PNP high power bipolar transistor27 May 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.NPN complement: PHPT60415NY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050