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PHPT60410NY . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHPT60410NY
   Código: 0410NAB
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 128 MHz
   Capacitancia de salida (Cc): 57 pF
   Ganancia de corriente contínua (hfe): 230
   Paquete / Cubierta: SOT669
 

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PHPT60410NY Datasheet (PDF)

 ..1. Size:233K  nxp
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PHPT60410NY

PHPT60410NY40 V, 10 A NPN high power bipolar transistor27 January 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT60410PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

 5.1. Size:245K  nxp
 phpt60410py.pdf pdf_icon

PHPT60410NY

PHPT60410PY40 V, 10 A PNP high power bipolar transistor21 January 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.NPN complement: PHPT60410NY2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

 6.1. Size:243K  nxp
 phpt60415ny.pdf pdf_icon

PHPT60410NY

PHPT60415NY40 V, 15 A NPN high power bipolar transistor27 May 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT60415PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C

 6.2. Size:243K  nxp
 phpt60415py.pdf pdf_icon

PHPT60410NY

PHPT60415PY40 V, 15 A PNP high power bipolar transistor27 May 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.NPN complement: PHPT60415NY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C

MOSTRAR MÁS

Otros transistores... PH3134-65M , PH3135-20M , PH3135-25S , PH3135-5M , PH3135-65M , PH3135-90S , PHPT60406NY , PHPT60406PY , 13003 , PHPT60410PY , PHPT60415NY , PHPT60415PY , PHPT60603NY , PHPT60603PY , PHPT60606NY , PHPT60606PY , PHPT60610NY .

History: TRF453 | OC66N | BDAP54A | BDS29B | TI621 | 2SB831C | MP3617

 

 
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