All Transistors. PHPT60410NY Datasheet

 

PHPT60410NY Datasheet and Replacement


   Type Designator: PHPT60410NY
   SMD Transistor Code: 0410NAB
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 128 MHz
   Collector Capacitance (Cc): 57 pF
   Forward Current Transfer Ratio (hFE), MIN: 230
   Noise Figure, dB: -
   Package: SOT669
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PHPT60410NY Datasheet (PDF)

 ..1. Size:233K  nxp
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PHPT60410NY

PHPT60410NY40 V, 10 A NPN high power bipolar transistor27 January 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT60410PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

 5.1. Size:245K  nxp
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PHPT60410NY

PHPT60410PY40 V, 10 A PNP high power bipolar transistor21 January 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.NPN complement: PHPT60410NY2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

 6.1. Size:243K  nxp
 phpt60415ny.pdf pdf_icon

PHPT60410NY

PHPT60415NY40 V, 15 A NPN high power bipolar transistor27 May 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT60415PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C

 6.2. Size:243K  nxp
 phpt60415py.pdf pdf_icon

PHPT60410NY

PHPT60415PY40 V, 15 A PNP high power bipolar transistor27 May 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.NPN complement: PHPT60415NY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ZTX304M | MRF5812 | LMUN5235DW1T1G | 2SD538 | BFG10W | MCH3245 | CPH3107

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