PHPT60603NY
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHPT60603NY
Código: 0603NAB
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140
MHz
Capacitancia de salida (Cc): 17
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
SOT669
Búsqueda de reemplazo de transistor bipolar PHPT60603NY
PHPT60603NY
Datasheet (PDF)
..1. Size:305K nxp
phpt60603ny.pdf
PHPT60603NY60V, 3 A NPN high power bipolar transistor10 January 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT60603PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed
5.1. Size:303K nxp
phpt60603py.pdf
PHPT60603PY60 V, 3 A PNP high power bipolar transistor13 January 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT60603NY.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C
6.1. Size:230K nxp
phpt60606py.pdf
PHPT60606PY60 V, 6 A PNP high power bipolar transistor9 December 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT60606NY.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C
6.2. Size:235K nxp
phpt60606ny.pdf
PHPT60606NY60 V, 6 A NPN high power bipolar transistor8 December 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT60606PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printe
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