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PHPT60603NY . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHPT60603NY
   Código: 0603NAB
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Capacitancia de salida (Cc): 17 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: SOT669
 

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PHPT60603NY Datasheet (PDF)

 ..1. Size:305K  nxp
 phpt60603ny.pdf pdf_icon

PHPT60603NY

PHPT60603NY60V, 3 A NPN high power bipolar transistor10 January 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT60603PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed

 5.1. Size:303K  nxp
 phpt60603py.pdf pdf_icon

PHPT60603NY

PHPT60603PY60 V, 3 A PNP high power bipolar transistor13 January 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT60603NY.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

 6.1. Size:230K  nxp
 phpt60606py.pdf pdf_icon

PHPT60603NY

PHPT60606PY60 V, 6 A PNP high power bipolar transistor9 December 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT60606NY.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

 6.2. Size:235K  nxp
 phpt60606ny.pdf pdf_icon

PHPT60603NY

PHPT60606NY60 V, 6 A NPN high power bipolar transistor8 December 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT60606PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printe

MOSTRAR MÁS

Otros transistores... PH3135-65M , PH3135-90S , PHPT60406NY , PHPT60406PY , PHPT60410NY , PHPT60410PY , PHPT60415NY , PHPT60415PY , 2SC2073 , PHPT60603PY , PHPT60606NY , PHPT60606PY , PHPT60610NY , PHPT60610PY , PHPT61002NYC , PHPT61002PYC , PHPT610030NK .

History: KSC184R | BCW81R | 2SC5899 | BC550A | BLY37 | BLY33 | 2SC3981

 

 
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