All Transistors. PHPT60603NY Datasheet

 

PHPT60603NY Datasheet and Replacement


   Type Designator: PHPT60603NY
   SMD Transistor Code: 0603NAB
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 17 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT669
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PHPT60603NY Datasheet (PDF)

 ..1. Size:305K  nxp
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PHPT60603NY

PHPT60603NY60V, 3 A NPN high power bipolar transistor10 January 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT60603PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed

 5.1. Size:303K  nxp
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PHPT60603NY

PHPT60603PY60 V, 3 A PNP high power bipolar transistor13 January 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT60603NY.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

 6.1. Size:230K  nxp
 phpt60606py.pdf pdf_icon

PHPT60603NY

PHPT60606PY60 V, 6 A PNP high power bipolar transistor9 December 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT60606NY.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

 6.2. Size:235K  nxp
 phpt60606ny.pdf pdf_icon

PHPT60603NY

PHPT60606NY60 V, 6 A NPN high power bipolar transistor8 December 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT60606PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printe

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