PHPT60610PY Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHPT60610PY  📄📄 

Código: 0610PAB

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 85 MHz

Capacitancia de salida (Cc): 135 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: SOT669

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PHPT60610PY datasheet

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PHPT60610PY

PHPT60610PY 60 V, 10 A PNP high power bipolar transistor 27 May 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60610NY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C

 5.1. Size:242K  nxp
 phpt60610ny.pdf pdf_icon

PHPT60610PY

PHPT60610NY 60 V, 10 A NPN high power bipolar transistor 27 May 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60610PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C

 7.1. Size:305K  nxp
 phpt60603ny.pdf pdf_icon

PHPT60610PY

PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60603PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed

 7.2. Size:230K  nxp
 phpt60606py.pdf pdf_icon

PHPT60610PY

PHPT60606PY 60 V, 6 A PNP high power bipolar transistor 9 December 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60606NY. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

MOSTRAR MÁS

Otros transistores... PHPT60410PY, PHPT60415NY, PHPT60415PY, PHPT60603NY, PHPT60603PY, PHPT60606NY, PHPT60606PY, PHPT60610NY, BC327, PHPT61002NYC, PHPT61002PYC, PHPT610030NK, PHPT610030NPK, PHPT610030PK, PHPT610035NK, PHPT610035PK, PHPT61003NY