PHPT60610PY Datasheet. Specs and Replacement

Type Designator: PHPT60610PY  📄📄 

SMD Transistor Code: 0610PAB

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 85 MHz

Collector Capacitance (Cc): 135 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT669

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PHPT60610PY datasheet

 ..1. Size:239K  nxp

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PHPT60610PY

PHPT60610PY 60 V, 10 A PNP high power bipolar transistor 27 May 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60610NY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C... See More ⇒

 5.1. Size:242K  nxp

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PHPT60610PY

PHPT60610NY 60 V, 10 A NPN high power bipolar transistor 27 May 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60610PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C... See More ⇒

 7.1. Size:305K  nxp

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PHPT60610PY

PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60603PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed... See More ⇒

 7.2. Size:230K  nxp

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PHPT60610PY

PHPT60606PY 60 V, 6 A PNP high power bipolar transistor 9 December 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60606NY. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C ... See More ⇒

Detailed specifications: PHPT60410PY, PHPT60415NY, PHPT60415PY, PHPT60603NY, PHPT60603PY, PHPT60606NY, PHPT60606PY, PHPT60610NY, BC327, PHPT61002NYC, PHPT61002PYC, PHPT610030NK, PHPT610030NPK, PHPT610030PK, PHPT610035NK, PHPT610035PK, PHPT61003NY

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