PHPT60610PY - Даташиты. Аналоги. Основные параметры

PHPT60610PY 60 V, 10 A PNP high power bipolar transistor 27 May 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60610NY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C

PHPT60610NY 60 V, 10 A NPN high power bipolar transistor 27 May 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60610PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C

PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60603PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed

PHPT60606PY 60 V, 6 A PNP high power bipolar transistor 9 December 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60606NY. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

PHPT60603PY 60 V, 3 A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60603NY. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

PHPT60606NY 60 V, 6 A NPN high power bipolar transistor 8 December 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60606PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printe