PHPT61010NY Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHPT61010NY 📄📄

Código: 1010NAB

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 145 MHz

Capacitancia de salida (Cc): 40 pF

Ganancia de corriente contínua (hFE): 25

Encapsulados: SOT669

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PHPT61010NY datasheet

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PHPT61010NY 100 V, 10 A NPN high power bipolar transistor 20 March 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT61010PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printe

5.1. Size:230K nxp
phpt61010py.pdf pdf_icon

PHPT61010PY 100 V, 10 A PNP high power bipolar transistor 20 March 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT61010NY. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

7.1. Size:230K nxp
phpt61006ny.pdf pdf_icon

PHPT61006NY 100 V, 6 A NPN high power bipolar transistor 26 January 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT61006PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

7.2. Size:228K nxp
phpt61006py.pdf pdf_icon

PHPT61006PY 100 V, 6 A PNP high power bipolar transistor 21 January 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT61006NY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print