PHPT61010NY Todos los transistores

 

PHPT61010NY . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHPT61010NY
   Código: 1010NAB
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 145 MHz
   Capacitancia de salida (Cc): 40 pF
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: SOT669

 Búsqueda de reemplazo de transistor bipolar PHPT61010NY

 

PHPT61010NY Datasheet (PDF)

 ..1. Size:233K  nxp
phpt61010ny.pdf pdf_icon

PHPT61010NY

PHPT61010NY 100 V, 10 A NPN high power bipolar transistor 20 March 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT61010PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printe

 5.1. Size:230K  nxp
phpt61010py.pdf pdf_icon

PHPT61010NY

PHPT61010PY 100 V, 10 A PNP high power bipolar transistor 20 March 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT61010NY. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

 7.1. Size:230K  nxp
phpt61006ny.pdf pdf_icon

PHPT61010NY

PHPT61006NY 100 V, 6 A NPN high power bipolar transistor 26 January 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT61006PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

 7.2. Size:228K  nxp
phpt61006py.pdf pdf_icon

PHPT61010NY

PHPT61006PY 100 V, 6 A PNP high power bipolar transistor 21 January 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT61006NY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

Otros transistores... PHPT610030NPK , PHPT610030PK , PHPT610035NK , PHPT610035PK , PHPT61003NY , PHPT61003PY , PHPT61006NY , PHPT61006PY , BD135 , PHPT61010PY , PIMC31 , PIMZ2 , PMA1302 , PMA1516 , PMB1370 , PMB1626 , PMB688 .

 

 
Back to Top

 


 
.