PHPT61010NY Datasheet and Replacement
Type Designator: PHPT61010NY
SMD Transistor Code: 1010NAB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25
W
Maximum Collector-Base Voltage |Vcb|: 100
V
Maximum Collector-Emitter Voltage |Vce|: 100
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj): 175
°C
Transition Frequency (ft): 145
MHz
Collector Capacitance (Cc): 40
pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package:
SOT669
- BJT Cross-Reference Search
PHPT61010NY Datasheet (PDF)
..1. Size:233K nxp
phpt61010ny.pdf 

PHPT61010NY100 V, 10 A NPN high power bipolar transistor20 March 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT61010PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printe
5.1. Size:230K nxp
phpt61010py.pdf 

PHPT61010PY100 V, 10 A PNP high power bipolar transistor20 March 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT61010NY.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C
7.1. Size:230K nxp
phpt61006ny.pdf 

PHPT61006NY100 V, 6 A NPN high power bipolar transistor26 January 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT61006PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print
7.2. Size:228K nxp
phpt61006py.pdf 

PHPT61006PY100 V, 6 A PNP high power bipolar transistor21 January 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.NPN complement: PHPT61006NY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print
7.3. Size:287K nxp
phpt61003py.pdf 

PHPT61003PY100 V, 3A PNP high power bipolar transistor13 January 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT61003NY2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C R
7.4. Size:291K nxp
phpt61003ny.pdf 

PHPT61003NY100 V, 3 A NPN high power bipolar transistor3 February 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT61003PY2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C
7.5. Size:255K nxp
phpt61002pyclh.pdf 

PHPT61002PYCLH100 V, 2 A PNP high power bipolar transistor13 July 2017 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) powerplastic package.NPN complement: PHPT61002NYCLH.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C
7.6. Size:243K nxp
phpt61002nyclh.pdf 

PHPT61002NYCLH100 V, 2 A NPN high power bipolar transistor31 March 2017 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) powerplastic package.PNP complement: PHPT61002PYCLH2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced P
7.7. Size:238K nxp
phpt610035pk.pdf 

PHPT610035PKPNP/PNP matched high power double bipolar transistor24 October 2014 Product data sheet1. General descriptionPNP/PNP high power matched double bipolar transistor in a SOT1205 (LFPAK56D)Surface-Mounted Device (SMD) power plastic package. Matched version ofPHPT610030PK.NPN/NPN complement: PHPT610035NK.2. Features and benefits Current gain matching 10 % High th
7.8. Size:283K nxp
phpt61002nyc.pdf 

PHPT61002NYC100V, 2 A NPN high power bipolar transistor9 January 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT61002PYC2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print
7.9. Size:295K nxp
phpt610030npk.pdf 

PHPT610030NPKNPN/PNP high power double bipolar transistor14 October 2014 Product data sheet1. General descriptionNPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.NPN/NPN complement: PHPT610030NK.PNP/PNP complement: PHPT610030PK.2. Features and benefits High thermal power dissipation capability Suita
7.10. Size:241K nxp
phpt610030nk.pdf 

PHPT610030NKNPN/NPN high power double bipolar transistor20 October 2014 Product data sheet1. General descriptionNPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.PNP/PNP complement: PHPT610030PK.NPN/PNP complement: PHPT610030NPK.2. Features and benefits High thermal power dissipation capability Suita
7.11. Size:239K nxp
phpt610030pk.pdf 

PHPT610030PKPNP/PNP high power double bipolar transistor22 October 2014 Product data sheet1. General descriptionPNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.NPN/NPN complement: PHPT610030NK.NPN/PNP complement: PHPT610030NPK.2. Features and benefits High thermal power dissipation capability Suita
7.12. Size:241K nxp
phpt610035nk.pdf 

PHPT610035NKNPN/NPN high power double bipolar transistor14 October 2014 Product data sheet1. General descriptionNPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK.PNP/PNP complement: PHPT610035PK.NPN/PNP complement: PHPT610035NPK.2. Features and benefits Current gain matchi
7.13. Size:284K nxp
phpt61002pyc.pdf 

PHPT61002PYC100 V, 2 A PNP high power bipolar transistor10 January 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT61002NYC.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C
Datasheet: 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP31
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
History: 2SD897A
| 2T6551
| RCA6340
| UN6115S
| 2SC2267
| AD541
| KT3140D
Keywords - PHPT61010NY transistor datasheet
PHPT61010NY cross reference
PHPT61010NY equivalent finder
PHPT61010NY lookup
PHPT61010NY substitution
PHPT61010NY replacement