All Transistors. PHPT61010NY Datasheet

 

PHPT61010NY Datasheet and Replacement


   Type Designator: PHPT61010NY
   SMD Transistor Code: 1010NAB
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 145 MHz
   Collector Capacitance (Cc): 40 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT669
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PHPT61010NY Datasheet (PDF)

 ..1. Size:233K  nxp
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PHPT61010NY

PHPT61010NY100 V, 10 A NPN high power bipolar transistor20 March 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT61010PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printe

 5.1. Size:230K  nxp
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PHPT61010NY

PHPT61010PY100 V, 10 A PNP high power bipolar transistor20 March 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT61010NY.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

 7.1. Size:230K  nxp
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PHPT61010NY

PHPT61006NY100 V, 6 A NPN high power bipolar transistor26 January 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT61006PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

 7.2. Size:228K  nxp
phpt61006py.pdf pdf_icon

PHPT61010NY

PHPT61006PY100 V, 6 A PNP high power bipolar transistor21 January 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.NPN complement: PHPT61006NY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SD897A | 2T6551 | RCA6340 | UN6115S | 2SC2267 | AD541 | KT3140D

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