PHPT61010NY Datasheet. Specs and Replacement

Type Designator: PHPT61010NY  📄📄 

SMD Transistor Code: 1010NAB

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 145 MHz

Collector Capacitance (Cc): 40 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SOT669

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PHPT61010NY datasheet

 ..1. Size:233K  nxp

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PHPT61010NY

PHPT61010NY 100 V, 10 A NPN high power bipolar transistor 20 March 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT61010PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printe... See More ⇒

 5.1. Size:230K  nxp

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PHPT61010NY

PHPT61010PY 100 V, 10 A PNP high power bipolar transistor 20 March 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT61010NY. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C ... See More ⇒

 7.1. Size:230K  nxp

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PHPT61010NY

PHPT61006NY 100 V, 6 A NPN high power bipolar transistor 26 January 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT61006PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print... See More ⇒

 7.2. Size:228K  nxp

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PHPT61010NY

PHPT61006PY 100 V, 6 A PNP high power bipolar transistor 21 January 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT61006NY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print... See More ⇒

Detailed specifications: PHPT610030NPK, PHPT610030PK, PHPT610035NK, PHPT610035PK, PHPT61003NY, PHPT61003PY, PHPT61006NY, PHPT61006PY, BD135, PHPT61010PY, PIMC31, PIMZ2, PMA1302, PMA1516, PMB1370, PMB1626, PMB688

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