PMD1047 Todos los transistores

 

PMD1047 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMD1047

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 160 V

Tensión colector-emisor (Vce): 140 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 15 MHz

Capacitancia de salida (Cc): 210 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO3PI

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PMD1047 datasheet

 ..1. Size:177K  pmc components
 pmd1047.pdf pdf_icon

PMD1047

PMD1047 NPN SILICON TRIPLE DIFFUSED PLANAR TRANSISTOR designed for 140V/12A AF 60W output application. complementary to PMB817. TO-3PI MAXIMUM RATINGS (Ta= 25 C) Characteristic Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 140 V Emitter Base Voltage VEBO 6 V Collector Current IC 12 A Collector Current (Pulse) ICP 15 A 1 Base

 9.1. Size:1241K  magnachip
 mpmd100b120rh.pdf pdf_icon

PMD1047

MPMD100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChip s IGBT Module 7DM-3 package BVCES= 1200V Low Conduction Loss VCE(sat) = 2.7V (typ.) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated Min. 10us at TC=100 Isolation Type Packa

 9.2. Size:199K  inchange semiconductor
 pmd10k60.pdf pdf_icon

PMD1047

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K60 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Complement to type PMD11K60 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER

 9.3. Size:199K  inchange semiconductor
 pmd10k80.pdf pdf_icon

PMD1047

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K80 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) Complement to type PMD11K80 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER

MOSTRAR MÁS

Otros transistores... PMBT3906VS , PMBT3906YS , PMBT3946VPN , PMBT3946YPN , PMBT4401YS , PMBT4403YS , PMBTA42DS , PMBTA44 , TIP2955 , PMD18D100 , PMD18D80 , PMD19D100 , PMD19D80 , PMD2001D , PMD20K200 , PMD2495 , PMD3001D .

History: 2SD1160 | PMD313 | PMD880 | PMD9001D | PMD19D100

 

 

 

 

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