PMD1047 - описание и поиск аналогов

PMD1047 NPN SILICON TRIPLE DIFFUSED PLANAR TRANSISTOR designed for 140V/12A AF 60W output application. complementary to PMB817. TO-3PI MAXIMUM RATINGS (Ta= 25 C) Characteristic Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 140 V Emitter Base Voltage VEBO 6 V Collector Current IC 12 A Collector Current (Pulse) ICP 15 A 1 Base

MPMD100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChip s IGBT Module 7DM-3 package BVCES= 1200V Low Conduction Loss VCE(sat) = 2.7V (typ.) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated Min. 10us at TC=100 Isolation Type Packa

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K60 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Complement to type PMD11K60 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K80 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) Complement to type PMD11K80 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K100 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min) Complement to type PMD11K100 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMET