PMD1047 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

PMD1047 Specs and Replacement

Type Designator: PMD1047

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Collector Capacitance (Cc): 210 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO3PI

PMD1047 Substitution

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PMD1047 datasheet

..1. Size:177K pmc components

pmd1047.pdf pdf_icon

PMD1047 NPN SILICON TRIPLE DIFFUSED PLANAR TRANSISTOR designed for 140V/12A AF 60W output application. complementary to PMB817. TO-3PI MAXIMUM RATINGS (Ta= 25 C) Characteristic Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 140 V Emitter Base Voltage VEBO 6 V Collector Current IC 12 A Collector Current (Pulse) ICP 15 A 1 Base ... See More ⇒

9.1. Size:1241K magnachip

mpmd100b120rh.pdf pdf_icon

MPMD100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChip s IGBT Module 7DM-3 package BVCES= 1200V Low Conduction Loss VCE(sat) = 2.7V (typ.) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated Min. 10us at TC=100 Isolation Type Packa... See More ⇒

9.2. Size:199K inchange semiconductor

pmd10k60.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K60 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Complement to type PMD11K60 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER ... See More ⇒

9.3. Size:199K inchange semiconductor

pmd10k80.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K80 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) Complement to type PMD11K80 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER ... See More ⇒