PMD3001D Todos los transistores

 

PMD3001D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMD3001D
   Código: 9F
   Material: Si
   Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.58 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SOT457
 

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PMD3001D Datasheet (PDF)

 ..1. Size:173K  nxp
 pmd3001d.pdf pdf_icon

PMD3001D

PMD3001DMOSFET driverRev. 02 28 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package.1.2 Features Low VCEsat Breakthrough In Small Signal (BISS) transistors in push-pull configuration Application-optimized pinout Space-saving solution

 8.1. Size:232K  willsemi
 wpmd3002.pdf pdf_icon

PMD3001D

WPMD3002WPMD3002Dual P-Channel, -30V, -4.9A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.049@ VGS=-10V-300.070@ VGS=-4.5VDescriptionsSOP-8LThe WPMD3002 is the Dual P-Channel logic mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistanc

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History: MPQ3641 | CD9015A

 

 
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