PMD3001D Todos los transistores

 

PMD3001D Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMD3001D

Código: 9F

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.58 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 300

Encapsulados: SOT457

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PMD3001D datasheet

 ..1. Size:173K  nxp
 pmd3001d.pdf pdf_icon

PMD3001D

PMD3001D MOSFET driver Rev. 02 28 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features Low VCEsat Breakthrough In Small Signal (BISS) transistors in push-pull configuration Application-optimized pinout Space-saving solution

 8.1. Size:232K  willsemi
 wpmd3002.pdf pdf_icon

PMD3001D

WPMD3002 WPMD3002 Dual P-Channel, -30V, -4.9A, Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.049@ VGS=-10V -30 0.070@ VGS=-4.5V Descriptions SOP-8L The WPMD3002 is the Dual P-Channel logic mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistanc

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