PMD3001D Datasheet, Equivalent, Cross Reference Search
Type Designator: PMD3001D
SMD Transistor Code: 9F
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.58 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: SOT457
PMD3001D Transistor Equivalent Substitute - Cross-Reference Search
PMD3001D Datasheet (PDF)
pmd3001d.pdf
PMD3001DMOSFET driverRev. 02 28 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package.1.2 Features Low VCEsat Breakthrough In Small Signal (BISS) transistors in push-pull configuration Application-optimized pinout Space-saving solution
wpmd3002.pdf
WPMD3002WPMD3002Dual P-Channel, -30V, -4.9A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.049@ VGS=-10V-300.070@ VGS=-4.5VDescriptionsSOP-8LThe WPMD3002 is the Dual P-Channel logic mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistanc
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
LIST
Last Update
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS