PT236T30E2H Todos los transistores

 

PT236T30E2H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PT236T30E2H
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT23-6L
 
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PT236T30E2H Datasheet (PDF)

 ..1. Size:123K  prisemi
 pt236t30e2h.pdf pdf_icon

PT236T30E2H

PT236T30E2H Transistor Feature 61This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 52 DC current gain >100 3.5A continuous collector current 4 PNP epitaxial planar silicon transistor 3Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualifi

 4.1. Size:156K  prisemi
 pt236t30e2.pdf pdf_icon

PT236T30E2H

PT236T30E2 Transistor Feature 61This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 52 DC current gain >100 3A continuous collector current 4 PNP epitaxial planar silicon transistor 3Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow tem

 4.2. Size:122K  prisemi
 pt236t30e2m.pdf pdf_icon

PT236T30E2H

PT236T30E2M Transistor Feature 61This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 52 DC current gain >100 3A continuous collector current 4 PNP epitaxial planar silicon transistor 3Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified

 9.1. Size:322K  central
 cmpt2369.pdf pdf_icon

PT236T30E2H

CMPT2369www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and high speed switching applications. MARKING CODE: C1JSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL

MOSTRAR MÁS

Otros transistores... PNT523T503E0-2 , PNT723T503E0-2 , PNTET50V01 , PPT523T503E0-2 , PPT89T30V5AE2M , PPT8N30E2 , PQMD12 , PT236T30E2 , 13009 , PT236T30E2M , PT23T2222A , PT23T2907A , PT23T3904 , PT23T3906 , PT23T5401 , PT23T5551 , PT23T8050 .

 

 
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