PT236T30E2H Todos los transistores

 

PT236T30E2H Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PT236T30E2H

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT23-6L

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PT236T30E2H datasheet

 ..1. Size:123K  prisemi
pt236t30e2h.pdf pdf_icon

PT236T30E2H

PT236T30E2H Transistor Feature 6 1 This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 5 2 DC current gain >100 3.5A continuous collector current 4 PNP epitaxial planar silicon transistor 3 Mechanical Characteristics Lead finish 100% matte Sn(Tin) Mounting position Any Qualifi

 4.1. Size:156K  prisemi
pt236t30e2.pdf pdf_icon

PT236T30E2H

PT236T30E2 Transistor Feature 6 1 This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 5 2 DC current gain >100 3A continuous collector current 4 PNP epitaxial planar silicon transistor 3 Mechanical Characteristics Lead finish 100% matte Sn(Tin) Mounting position Any Qualified max reflow tem

 4.2. Size:122K  prisemi
pt236t30e2m.pdf pdf_icon

PT236T30E2H

PT236T30E2M Transistor Feature 6 1 This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 5 2 DC current gain >100 3A continuous collector current 4 PNP epitaxial planar silicon transistor 3 Mechanical Characteristics Lead finish 100% matte Sn(Tin) Mounting position Any Qualified

 9.1. Size:322K  central
cmpt2369.pdf pdf_icon

PT236T30E2H

CMPT2369 www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and high speed switching applications. MARKING CODE C1J SOT-23 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL

Otros transistores... PNT523T503E0-2 , PNT723T503E0-2 , PNTET50V01 , PPT523T503E0-2 , PPT89T30V5AE2M , PPT8N30E2 , PQMD12 , PT236T30E2 , TIP3055 , PT236T30E2M , PT23T2222A , PT23T2907A , PT23T3904 , PT23T3906 , PT23T5401 , PT23T5551 , PT23T8050 .

History: PPT89T30V5AE2M | LBC560AP | LDA450

 

 

 

 

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