PT236T30E2H pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

PT236T30E2H Specs and Replacement

Type Designator: PT236T30E2H

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23-6L

PT236T30E2H Substitution

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PT236T30E2H datasheet

..1. Size:123K prisemi

pt236t30e2h.pdf pdf_icon

PT236T30E2H Transistor Feature 6 1 This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 5 2 DC current gain >100 3.5A continuous collector current 4 PNP epitaxial planar silicon transistor 3 Mechanical Characteristics Lead finish 100% matte Sn(Tin) Mounting position Any Qualifi... See More ⇒

4.1. Size:156K prisemi

pt236t30e2.pdf pdf_icon

PT236T30E2 Transistor Feature 6 1 This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 5 2 DC current gain >100 3A continuous collector current 4 PNP epitaxial planar silicon transistor 3 Mechanical Characteristics Lead finish 100% matte Sn(Tin) Mounting position Any Qualified max reflow tem... See More ⇒

4.2. Size:122K prisemi

pt236t30e2m.pdf pdf_icon

PT236T30E2M Transistor Feature 6 1 This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 5 2 DC current gain >100 3A continuous collector current 4 PNP epitaxial planar silicon transistor 3 Mechanical Characteristics Lead finish 100% matte Sn(Tin) Mounting position Any Qualified... See More ⇒

9.1. Size:322K central

cmpt2369.pdf pdf_icon

CMPT2369 www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and high speed switching applications. MARKING CODE C1J SOT-23 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL... See More ⇒

Detailed specifications: PNT523T503E0-2, PNT723T503E0-2, PNTET50V01, PPT523T503E0-2, PPT89T30V5AE2M, PPT8N30E2, PQMD12, PT236T30E2, TIP3055, PT236T30E2M, PT23T2222A, PT23T2907A, PT23T3904, PT23T3906, PT23T5401, PT23T5551, PT23T8050