PT236T30E2H Datasheet, Equivalent, Cross Reference Search
Type Designator: PT236T30E2H
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 150 Β°C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23_6L
PT236T30E2H Transistor Equivalent Substitute - Cross-Reference Search
PT236T30E2H Datasheet (PDF)
1.1. pt236t30e2.pdf 
Size:123K _upd
ο»Ώ PT236T30E2 Transistor Feature 6 1 This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. ο Very low collector to emitter saturation voltage 5 2 ο DC current gain >100 ο 3A continuous collector current 4 ο PNP epitaxial planar silicon transistor 3 Mechanical Characteristics ο Lead finish:100% matte Sn(Tin) ο Mounting position: Any ο Qualified
1.2. pt236t30e2h.pdf Size:123K _upd
ο»Ώ PT236T30E2H Transistor Feature 6 1 This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. ο Very low collector to emitter saturation voltage 5 2 ο DC current gain >100 ο 3.5A continuous collector current 4 ο PNP epitaxial planar silicon transistor 3 Mechanical Characteristics ο Lead finish:100% matte Sn(Tin) ο Mounting position: Any ο Qualifi
1.3. pt236t30e2m.pdf Size:122K _upd
ο»Ώ PT236T30E2M Transistor Feature 6 1 This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. ο Very low collector to emitter saturation voltage 5 2 ο DC current gain >100 ο 3A continuous collector current 4 ο PNP epitaxial planar silicon transistor 3 Mechanical Characteristics ο Lead finish:100% matte Sn(Tin) ο Mounting position: Any ο Qualified
Datasheet: PNT523T503E0-2 , PNT723T503E0-2 , PNTET50V01 , PPT523T503E0-2 , PPT89T30V5AE2M , PPT8N30E2 , PQMD12 , PT236T30E2 , 2SC5200 , PT236T30E2M , PT23T2222A , PT23T2907A , PT23T3904 , PT23T3906 , PT23T5401 , PT23T5551 , PT23T8050 .
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