PT236T30E2H Datasheet, Equivalent, Cross Reference Search
Type Designator: PT236T30E2H
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23_6L
PT236T30E2H Transistor Equivalent Substitute - Cross-Reference Search
PT236T30E2H Datasheet (PDF)
1.1. pt236t30e2.pdf 
Size:123K _upd
PT236T30E2 Transistor Feature 6 1 This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 5 2 DC current gain >100 3A continuous collector current 4 PNP epitaxial planar silicon transistor 3 Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified
1.2. pt236t30e2h.pdf Size:123K _upd
PT236T30E2H Transistor Feature 6 1 This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 5 2 DC current gain >100 3.5A continuous collector current 4 PNP epitaxial planar silicon transistor 3 Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualifi
1.3. pt236t30e2m.pdf Size:122K _upd
PT236T30E2M Transistor Feature 6 1 This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 5 2 DC current gain >100 3A continuous collector current 4 PNP epitaxial planar silicon transistor 3 Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified
Datasheet: D32S8 , D32S9 , D32W10 , D32W11 , D32W12 , D32W13 , D32W14 , D32W7 , S8050 , D32W9 , D33D1 , D33D2 , D33D21 , D33D22 , D33D23 , D33D24 , D33D25 .
