Справочник транзисторов. PT236T30E2H

 

Биполярный транзистор PT236T30E2H Даташит. Аналоги


   Наименование производителя: PT236T30E2H
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 3.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SOT23-6L
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PT236T30E2H Datasheet (PDF)

 ..1. Size:123K  prisemi
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PT236T30E2H

PT236T30E2H Transistor Feature 61This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 52 DC current gain >100 3.5A continuous collector current 4 PNP epitaxial planar silicon transistor 3Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualifi

 4.1. Size:156K  prisemi
pt236t30e2.pdfpdf_icon

PT236T30E2H

PT236T30E2 Transistor Feature 61This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 52 DC current gain >100 3A continuous collector current 4 PNP epitaxial planar silicon transistor 3Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow tem

 4.2. Size:122K  prisemi
pt236t30e2m.pdfpdf_icon

PT236T30E2H

PT236T30E2M Transistor Feature 61This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 52 DC current gain >100 3A continuous collector current 4 PNP epitaxial planar silicon transistor 3Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified

 9.1. Size:322K  central
cmpt2369.pdfpdf_icon

PT236T30E2H

CMPT2369www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and high speed switching applications. MARKING CODE: C1JSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL

Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2SC267 | ZTX237L | 2SC6077 | SRA2207S | BSV43B | HBA114TS6R | DWC310

 

 
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