2N3700HR . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features 1 BVCEO 80 V 2 3 IC(max) 1 A 3 3 TO-18 4 HFE at 10 V - 150 mA >100 1 1 2 2 LCC-3 UB Hermetic packages Pin 4 in UB is connected to the metallic lid ESCC and Jans qualified Up to 100 krad(Si) low dose rate Figure 1. Internal schematic diagram Description The 2N3700HR is a NPN tr

2N3700 General purpose amplifiers Description The 2N3700 is silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is intended for small signal, low noise industrial applications. TO-18 Internal schematic diagram Order codes Part Number Marking Package Packing 2N3700 2N3700 TO-18 Bag November 2006 Rev 2 1/7 www.st.com 7 Electrical ratings 2N3700 1 Electrical ratin

DATA SHEET 2N3700 2N3701 NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current general purpose amplifier applications. MAXIMUM RATINGS (TA=25 C) 2N3700 SYMBOL 2N3701 UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3700 2N3701 TO-18 General purpose amplifier ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 140 V Collector -Emitter Voltage VCEO 80 V Emitter -Base Voltage VEBO 7.0 V Collector Current IC 1.0 A Power Dissipation @

TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices Qualified Level 2N3019 2N3057A 2N3700 JAN 2N3019S 2N3700S JANTX JANTXV JANS MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 140 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 7.0 Vdc VEBO 2N3019, 2N3019S Collector