2N3741SMD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3741SMD  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Capacitancia de salida (Cc): 100 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: SMD1

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2N3741SMD datasheet

 ..1. Size:32K  semelab
2n3741smd.pdf pdf_icon

2N3741SMD

2N3741 SMD SEME LAB MECHANICAL DATA MEDIUM POWER PNP Dimensions in mm SILICON POWER TRANSISTOR LOW SATURATION VOLTAGE HIGH GAIN FEATURES Hermetically sealed Surface Mount Package. Small Footprint - efficient use of PCB space. Lightweight

 8.1. Size:62K  microsemi
2n3741a.pdf pdf_icon

2N3741SMD

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE (561) 842-0305 FAX (561) 845-7813 2N3741A APPLICATIONS Drivers Switches Medium-Power Amplifiers FEATURES Medium Power Low Saturation Voltage 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics hFE @ IC = 250 mA 30-100 PNP Transistors Excellent Safe Area Limits Low Collector Cuto

 8.2. Size:62K  microsemi
2n3741.pdf pdf_icon

2N3741SMD

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE (561) 842-0305 FAX (561) 845-7813 2N3741 APPLICATIONS Drivers Switches Medium-Power Amplifiers FEATURES Medium Power Low Saturation Voltage 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics hFE @ IC = 250 mA 30-100 PNP Transistors Excellent Safe Area Limits Complementary to NP

 8.3. Size:221K  inchange semiconductor
2n3741a.pdf pdf_icon

2N3741SMD

isc Silicon PNP Power Transistor 2N3741A DESCRIPTION Collector-Emitter Breakdown Voltage- V =-80V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -

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