2N4922G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N4922G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Capacitancia de salida (Cc): 100 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO-225
Búsqueda de reemplazo de 2N4922G
2N4922G Datasheet (PDF)
2n4922g.pdf

2N4921, 2N4922, 2N49232N4923 is a Preferred DeviceMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.Featureshttp://onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction -PD = 30
2n4921g 2n4922g 2n4923g.pdf

2N4921G, 2N4922G,2N4923GMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.www.onsemi.comFeatures1.0 AMPERE Low Saturation VoltageGENERAL PURPOSE Excellent Power DissipationPOWER TRANSISTORS Excellent Safe Operating Area40-80 VOLTS, 30 WATTS Complement
2n4921 2n4922 2n4923.pdf

Order this documentMOTOROLAby 2N4921/DSEMICONDUCTOR TECHNICAL DATA2N4921Medium-Power Plastic NPNthruSilicon Transistors2N4923*. . . designed for driver circuits, switching, and amplifier applications. Thesehighperformance plastic devices feature:*Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp1 AMPERE Excellent
2n4921 2n4922 2n4923.pdf

2N4921, 2N4922, 2N49232N4923 is a Preferred DeviceMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.Featureshttp://onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction -PD = 30
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: CSA562Y | 2SC1894 | PDTA114YE
History: CSA562Y | 2SC1894 | PDTA114YE



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