2N4922G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N4922G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3
MHz
Capacitancia de salida (Cc): 100
pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO-225
Búsqueda de reemplazo de transistor bipolar 2N4922G
2N4922G
Datasheet (PDF)
..1. Size:91K onsemi
2n4922g.pdf 
2N4921, 2N4922, 2N49232N4923 is a Preferred DeviceMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.Featureshttp://onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction -PD = 30
..2. Size:241K onsemi
2n4921g 2n4922g 2n4923g.pdf
2N4921G, 2N4922G,2N4923GMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.www.onsemi.comFeatures1.0 AMPERE Low Saturation VoltageGENERAL PURPOSE Excellent Power DissipationPOWER TRANSISTORS Excellent Safe Operating Area40-80 VOLTS, 30 WATTS Complement
8.1. Size:238K motorola
2n4921 2n4922 2n4923.pdf
Order this documentMOTOROLAby 2N4921/DSEMICONDUCTOR TECHNICAL DATA2N4921Medium-Power Plastic NPNthruSilicon Transistors2N4923*. . . designed for driver circuits, switching, and amplifier applications. Thesehighperformance plastic devices feature:*Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp1 AMPERE Excellent
8.2. Size:90K onsemi
2n4921 2n4922 2n4923.pdf
2N4921, 2N4922, 2N49232N4923 is a Preferred DeviceMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.Featureshttp://onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction -PD = 30
8.3. Size:41K jmnic
2n4921 2n4922 2n4923.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION With TO-126 package Complement to type 2N4918,2N4919 2N4920 Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to
8.4. Size:214K inchange semiconductor
2n4922.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N4922DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector Saturatioin Voltage-: V = 0.6V(Max.)@ I = 1ACE(sat) CWide Area of Safe OperationComplement to Type 2N4919Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for d
8.5. Size:118K inchange semiconductor
2n4921 2n4922 2n4923.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION With TO-126 package Complement to type 2N4918/4919/4920 Excellent safe operating area Low collector saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
