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2N4922G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N4922G

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 3 MHz

Capacitancia de salida (Cc): 100 pF

Ganancia de corriente contínua (hfe): 30

Empaquetado / Estuche: TO-225

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2N4922G Datasheet (PDF)

1.1. 2n4922g.pdf Size:91K _onsemi

2N4922G
2N4922G

2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE • Excellent Power Dissipation Due to Thermopad Construction - PD = 30

4.1. 2n4921 2n4922 2n4923.pdf Size:238K _motorola

2N4922G
2N4922G

Order this document MOTOROLA by 2N4921/D SEMICONDUCTOR TECHNICAL DATA 2N4921 Medium-Power Plastic NPN thru Silicon Transistors 2N4923 * . . . designed for driver circuits, switching, and am

4.2. 2n4921 2n4922 2n4923.pdf Size:90K _onsemi

2N4922G
2N4922G

2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE • Excellent Power Dissipation Due to Thermopad Construction - PD = 30

 4.3. 2n4921 2n4922 2n4923.pdf Size:41K _jmnic

2N4922G
2N4922G

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION · ·With TO-126 package ·Complement to type 2N4918,2N4919 2N4920 ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to

4.4. 2n4921 2n4922 2n4923.pdf Size:118K _inchange_semiconductor

2N4922G
2N4922G

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION · ·With TO-126 package ·Complement to type 2N4918/4919/4920 ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2

 4.5. 2n4922.pdf Size:214K _inchange_semiconductor

2N4922G
2N4922G

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N4922 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 60V(Min) CEO(SUS) ·Low Collector Saturatioin Voltage- : V = 0.6V(Max.)@ I = 1A CE(sat) C ·Wide Area of Safe Operation ·Complement to Type 2N4919 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for d

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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